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IXFH 100N25P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-247 (IXFH) Outline
Min. Typ. Max.
g fs
C iss
V DS = 10 V; I D = 0.5 I D25 , pulse test
40
56
6300
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
1150
pF
1
2
3
C rss
t d(on)
240
25
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
26
ns
A 1
A 2
b 1
b 2
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
R G = 3.3 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
100
28
185
43
91
0.25
ns
ns
nC
nC
nC
0.21 ° C/W
° C/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
2.2 2.54
2.2 2.6
b 1.0 1.4
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Characteristic Values
L1 4.50
.177
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.140 .144
0.232 0.252
.170 .216
I S
I SM
V SD
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
100
250
1.5
A
A
V
S 6.15 BSC
242 BSC
t rr
Q RM
I RM
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V
0.6
10
200 ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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